The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 16, 2021
Filed:
Jul. 03, 2019
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Junli Wang, Slingerlands, NY (US);
Romain Lallement, Troy, NY (US);
Ardasheir Rahman, Schenectady, NY (US);
Liying Jiang, Guilderland, NY (US);
Brent A. Anderson, Jericho, VT (US);
Assignee:
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/266 (2006.01); H01L 21/265 (2006.01); H01L 21/027 (2006.01);
U.S. Cl.
CPC ...
H01L 21/266 (2013.01); H01L 21/0276 (2013.01); H01L 21/26513 (2013.01);
Abstract
Methods for doping a semiconductor layer include forming a first mask on a first region of a semiconductor layer. A second region of the semiconductor layer, that is not covered by the first mask, is doped. A second mask is formed on the second region of the semiconductor layer. The first mask is etched away. The first region of the semiconductor layer is doped.