The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 16, 2021
Filed:
Jan. 16, 2019
Rohm Co., Ltd., Kyoto, JP;
Yohei Nakamura, Kyoto, JP;
Tatsuya Yanagi, Kyoto, JP;
Rohm Co., Ltd., Kyoto, JP;
Abstract
A method for measuring current-voltage characteristics representing the relationship between the drain current and the drain-source voltage of a first transistor includes: a first step of setting the drain current and the drain-source voltage using a voltage source and a current source connected in series with the first transistor and a rectifying element connected in parallel with, with the reverse polarity to, an inductive load as the current source; a second step of measuring the gate-source voltage and the gate current in the switching transient state of the first transistor; and a third step of calculating the voltage applied to the gate oxide film of the first transistor using the results of the measurement of the gate-source voltage and the gate current and acquiring the current-voltage characteristics of the first transistor using the result of the calculation. In the first step, during an excitation period in which an excitation current is passed through the inductive load, part of the excitation current is bypassed through a path that does not pass through the first transistor.