The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 16, 2021
Filed:
Feb. 02, 2018
Applicant:
National Tsing Hua University, Hsinchu, TW;
Inventors:
Assignee:
National Tsing Hua University, Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01N 27/414 (2006.01); G01N 33/18 (2006.01); G01N 33/20 (2019.01); G01N 27/333 (2006.01); H01L 29/778 (2006.01);
U.S. Cl.
CPC ...
G01N 27/4148 (2013.01); G01N 27/4143 (2013.01); G01N 33/1813 (2013.01); G01N 33/20 (2013.01); G01N 27/333 (2013.01); H01L 29/7787 (2013.01);
Abstract
A sensing device including a transistor, at least one response electrode, and a selective membrane is provided. The transistor includes a gate end, a source end, a drain end, and a semiconductor layer, wherein the source end and the drain end are located on the semiconductor layer, and the gate end is located between the source end and the drain end. The at least one response electrode is disposed opposite to the gate end of the transistor and spaced apart from the transistor. The selective membrane is located on the at least one response electrode or on the transistor.