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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11171315 B1

PDFFull Text
Date of Patent:
Nov. 09, 2021

Filed:

Feb. 01, 2019

Semiconductor device having a structure which prevents a defect due to precision and bending and manufacturing method thereof

Applicant:

Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;

Inventors:

Hideaki Kuwabara, Kanagawa, JP;

Hideto Ohnuma, Kanagawa, JP;

Assignee:

Semiconductor Energy Laboratory Co., Ltd.;

Attorney:

Husch Blackwell LLP

Primary Examiner:

Tracie Y Green

Int. Cl.
CPC ...
H01L 51/56 (2006.01); H01L 27/32 (2006.01); H01L 33/36 (2010.01); H01L 51/52 (2006.01); H01L 51/00 (2006.01);
U.S. Cl.
CPC ...
H01L 51/56 (2013.01); H01L 27/3241 (2013.01); H01L 27/3246 (2013.01); H01L 27/3258 (2013.01); H01L 27/3262 (2013.01); H01L 33/36 (2013.01); H01L 51/52 (2013.01); H01L 51/0011 (2013.01); H01L 2251/5338 (2013.01);
Abstract

As a result of miniaturization of a pixel region associated with an improvement in definition and an increase in a substrate size associated with an increase in area, defects due to precision, bending, and the like of a mask used at the time of evaporation have become issues. A partition including portions with different thicknesses over a pixel electrode (also referred to as a first electrode) in a display region and in the vicinity of a pixel electrode layer is formed, without increasing the number of steps, by using a photomask or a reticle provided with an auxiliary pattern having a light intensity reduction function made of a diffraction grating pattern or a semi-transmissive film.

Find Patent Forward Citations

Kuwabara, Hideaki. (2021). Semiconductor device having a structure which prevents a defect due to precision and bending and manufacturing method thereof (U.S. Patent No. 11171315). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11171315

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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