The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 09, 2021
Filed:
Dec. 27, 2018
Applicant:
Solaround Ltd., Jerusalem, IL;
Inventors:
Assignee:
SOLAROUND LTD., Jerusalem, IL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/18 (2006.01); H01L 31/068 (2012.01); H01L 31/0216 (2014.01); H01L 31/0224 (2006.01); H01L 31/0236 (2006.01); H01L 31/0288 (2006.01);
U.S. Cl.
CPC ...
H01L 31/0684 (2013.01); H01L 31/0288 (2013.01); H01L 31/02167 (2013.01); H01L 31/02168 (2013.01); H01L 31/02363 (2013.01); H01L 31/022425 (2013.01); H01L 31/1804 (2013.01); H01L 31/1868 (2013.01);
Abstract
A method of producing a bifacial photovoltaic cell is disclosed herein, the method comprising: forming a boron-containing layer on a second surface of a semiconductor substrate; forming a cap layer above the boron-containing layer; effecting simultaneously: i) deposition on the first surface and ii) diffusion into it of the phosphorous using POClgas phase process and iii) diffusion of the boron into the second surface of the substrate, to thereby dope the first surface with n-dopant and the second surface with boron.