The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 09, 2021
Filed:
Feb. 18, 2019
Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd., Wuhan, CN;
Wei Yu, Wuhan, CN;
Other;
Abstract
Disclosed is a metal oxide thin film transistor and a manufacturing method thereof. By disposing a portion of the source and a portion of the drain in the same layer as the first insulating layer, the reflection of the ultraviolet light by the source, the drain and the first insulating layer can be blocked from entering the conductive channel. Therefore, a threshold voltage shift of the metal oxide thin film transistor under irradiation of ultraviolet light to the conductive channel can be prevented, and the threshold voltage stability and display quality are improved.
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