The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 09, 2021

Filed:

Jul. 23, 2019
Applicant:

Lg Display Co., Ltd., Seoul, KR;

Inventors:

JuHeyuck Baeck, Paju-si, KR;

Dohyung Lee, Paju-si, KR;

ChanYong Jeong, Paju-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 27/12 (2006.01); H01L 27/32 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7869 (2013.01); H01L 27/1225 (2013.01); H01L 29/78603 (2013.01); H01L 29/78633 (2013.01); H01L 29/78696 (2013.01); H01L 27/3262 (2013.01); H01L 27/3272 (2013.01);
Abstract

A thin film transistor includes an active layer including a channel portion; a gate electrode spaced apart from the active layer and overlapping at least a part of the active layer; and source and drain electrodes connected with the active layer and spaced apart from each other, wherein the channel portion includes, a first boundary portion connected with one of the source and drain electrodes; a second boundary portion connected with the other one of the source and drain electrodes; and a main channel portion interposed between the first boundary portion and the second boundary portion, and wherein at least a part of the second boundary portion has a thickness smaller than a thickness of the main channel portion.


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