The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 09, 2021
Filed:
Feb. 28, 2020
Denso Corporation, Kariya, JP;
DENSO CORPORATION, Kariya, JP;
Abstract
A silicon carbide semiconductor device includes a semiconductor element with a MOS structure having: a substrate; a drift layer on the substrate; a base region on the drift layer; a source region on the base region; a trench gate structure having a gate insulation film and a gate electrode in a gate trench disposed from a surface of the source region to be deeper than the base region; an interlayer insulation film covering the gate electrode and the gate insulation film; a source electrode on the interlayer insulation film, the source region and the base region; and a drain electrode. The semiconductor element flows a current when a gate voltage is applied to the gate electrode and a channel region is provided in a portion of the base region in contact with the trench gate structure.