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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11171214 B1

PDFFull Text
Date of Patent:
Nov. 09, 2021

Filed:

Jan. 29, 2020

Semiconductor epitaxial wafer, semiconductor device, and method for manufacturing semiconductor epitaxial wafer

Applicant:

Panasonic Intellectual Property Management Co., Ltd., Osaka, JP;

Inventors:

Tsutomu Kiyosawa, Toyama, JP;

Atsushi Ohoka, Kyoto, JP;

Assignee:

PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD., Osaka, JP;

Attorney:

McDermott Will and Emery LLP

Primary Examiner:

Richard A Booth

Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 29/36 (2006.01); H01L 21/02 (2006.01); H01L 29/78 (2006.01); H01L 29/16 (2006.01); H01L 27/088 (2006.01);
U.S. Cl.
CPC ...
H01L 29/36 (2013.01); H01L 21/0257 (2013.01); H01L 21/02378 (2013.01); H01L 21/02529 (2013.01); H01L 27/088 (2013.01); H01L 29/1608 (2013.01); H01L 29/78 (2013.01);
Abstract

Variations in device characteristics in a plane parallel to the principal surface of a semiconductor wafer are suppressed. A semiconductor epitaxial wafer includes a semiconductor wafer and a first conductivity type semiconductor epitaxial layer that is disposed on a principal surface of the semiconductor wafer and contains a first conductivity type impurity, and the thickness distribution of the semiconductor epitaxial layer and the concentration distribution of the impurity in the semiconductor epitaxial layer have a positive correlation in a plane parallel to the principal surface of the semiconductor wafer.

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Kiyosawa, Tsutomu. (2021). Semiconductor epitaxial wafer, semiconductor device, and method for manufacturing semiconductor epitaxial wafer (U.S. Patent No. 11171214). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11171214

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