The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 09, 2021

Filed:

Jan. 24, 2017
Applicant:

Sony Corporation, Tokyo, JP;

Inventor:

Masanori Tsukamoto, Kanagawa, JP;

Assignee:

SONY CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/08 (2006.01); H01L 27/1159 (2017.01); H01L 21/28 (2006.01); H01L 29/78 (2006.01); H01L 21/02 (2006.01); H01L 21/3213 (2006.01); H01L 27/11592 (2017.01); H01L 29/06 (2006.01); H01L 29/51 (2006.01); H01L 29/66 (2006.01); H01L 21/3105 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1159 (2013.01); H01L 21/0228 (2013.01); H01L 21/02189 (2013.01); H01L 21/02194 (2013.01); H01L 21/32135 (2013.01); H01L 21/32139 (2013.01); H01L 27/11592 (2013.01); H01L 29/0649 (2013.01); H01L 29/0847 (2013.01); H01L 29/40111 (2019.08); H01L 29/516 (2013.01); H01L 29/517 (2013.01); H01L 29/6659 (2013.01); H01L 29/6684 (2013.01); H01L 29/7833 (2013.01); H01L 29/7843 (2013.01); H01L 29/78391 (2014.09); H01L 21/0217 (2013.01); H01L 21/02164 (2013.01); H01L 21/02238 (2013.01); H01L 21/02255 (2013.01); H01L 21/02271 (2013.01); H01L 21/02274 (2013.01); H01L 21/31053 (2013.01); H01L 29/513 (2013.01);
Abstract

Provided are a semiconductor storage element, a semiconductor device, an electronic device, and a manufacturing method of a semiconductor storage element that enable higher-speed operations. The semiconductor storage element includes: a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type that is provided below the first semiconductor layer; a gate electrode provided on the first semiconductor layer; a gate insulator film provided between the first semiconductor layer and the gate electrode; a drain region of the second conductivity type that is provided in the first semiconductor layer on one side of the gate electrode; a source region of the second conductivity type that is provided in the first semiconductor layer on another side facing the one side across the gate electrode; and a bit line configured to electrically connect with both of the source region and the first semiconductor layer.


Find Patent Forward Citations

Tsukamoto, Masanori. (2021). Multi-layer semiconductor element, semiconductor device, and electronic device for storage, and method of manufacturing the same (U.S. Patent No. 11171155). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11171155

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…