The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 09, 2021

Filed:

May. 06, 2020
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Jennifer Fullam, Clifton Park, NY (US);

Su Chen Fan, Cohoes, NY (US);

Christopher J. Waskiewicz, Rexford, NY (US);

Muthumanickam Sankarapandian, Niskayuna, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76877 (2013.01); H01L 21/76802 (2013.01); H01L 21/76843 (2013.01); H01L 23/5226 (2013.01);
Abstract

Embodiments of the invention include a method of forming a multi-layer integrated circuit (IC) structure that includes forming a first layer of the multi-layered IC structure, wherein the first layer includes a trench having a liner and a conductive interconnect formed in the trench. The liner is formed such that it is not on a portion of a sidewall of the conductive interconnect. A multi-segmented cap is formed having a first cap segment and a second cap segment. The first cap segment is on a top surface of the conductive interconnect, and a first portion of the second cap segment is on the portion of the sidewall of the conductive interconnect. The second cap segment is on a top surface of the first cap segment.


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