The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 09, 2021

Filed:

Jun. 07, 2017
Applicant:

Mitsubishi Electric Corporation, Tokyo, JP;

Inventor:

Kohei Nishiguchi, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/288 (2006.01); H01L 21/027 (2006.01); H01L 21/285 (2006.01); H01L 29/20 (2006.01); H01L 29/423 (2006.01); H01L 29/47 (2006.01); H01L 29/66 (2006.01); H01L 29/778 (2006.01);
U.S. Cl.
CPC ...
H01L 21/288 (2013.01); H01L 21/0272 (2013.01); H01L 21/28581 (2013.01); H01L 21/28587 (2013.01); H01L 29/2003 (2013.01); H01L 29/42316 (2013.01); H01L 29/475 (2013.01); H01L 29/66462 (2013.01); H01L 29/7786 (2013.01);
Abstract

Included are forming, on a semiconductor substrate, an insulation film having an opening section where an opening is formed, forming a first resist on the insulation film while avoiding the opening section and the semiconductor substrate exposed via the opening section, forming a first metal on the opening section, the semiconductor substrate exposed via the opening section, and the first resist by a vapor deposition method or a sputtering method, removing, by a lift-off method, the first resist and the first metal on the first resist, forming, on the insulation film, a second resist allowing the first metal to be exposed, causing the first metal to grow a second metal by an electroless plating method, and removing the second resist, where these processings are included in the listed order.


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