The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 09, 2021

Filed:

May. 03, 2018
Applicant:

Asm Ip Holding B.v., Almere, NL;

Inventors:

Eva Tois, Helsinki, FI;

Viljami Pore, Helsinki, FI;

Suvi Haukka, Helsinki, FI;

Toshiya Suzuki, Machida, JP;

Lingyun Jia, Helsinki, FI;

Sun Ja Kim, Helsinki, FI;

Oreste Madia, Leuven, BE;

Assignee:

ASM IP HOLDING B.V., Almere, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/40 (2006.01); H01L 21/02 (2006.01); C23C 16/455 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02274 (2013.01); C23C 16/401 (2013.01); C23C 16/45542 (2013.01); C23C 16/45553 (2013.01); H01L 21/0228 (2013.01); H01L 21/02126 (2013.01); H01L 21/02164 (2013.01); H01L 21/02186 (2013.01); H01L 21/02216 (2013.01);
Abstract

Methods for selectively depositing oxide thin films on a dielectric surface of a substrate relative to a metal surface are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a first precursor comprising oxygen and a species to be included in the oxide, such as a metal or silicon, and a second plasma reactant. In some embodiments the second plasma reactant comprises a plasma formed in a reactant gas that does not comprise oxygen. In some embodiments the second plasma reactant comprises plasma generated in a gas comprising hydrogen.


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