The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 09, 2021

Filed:

Jun. 24, 2020
Applicant:

Sandisk Technologies Llc, Addison, TX (US);

Inventors:

Justin Phillip Kinney, San Jose, CA (US);

Daniel Bedau, San Jose, CA (US);

Assignee:

SanDisk Technologies LLC, Addison, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01); G11C 13/00 (2006.01); G11C 11/16 (2006.01);
U.S. Cl.
CPC ...
G11C 13/003 (2013.01); G11C 11/1659 (2013.01); G11C 11/1673 (2013.01); G11C 11/1675 (2013.01); G11C 13/004 (2013.01); G11C 13/0069 (2013.01); G11C 2013/0045 (2013.01); G11C 2013/0078 (2013.01); G11C 2213/72 (2013.01); G11C 2213/74 (2013.01); G11C 2213/76 (2013.01); G11C 2213/79 (2013.01);
Abstract

Technology for operating cross-bar arrays is disclosed herein. The memory cells may each have a reversible resistivity element and a steering element comprising a diode. The cross-bar array may be operated in read mode and a bipolar programming mode. Selected memory cells may be sensed by operating the steering elements such that sense currents pass through the diodes and any sneak currents are blocked by the diodes. During bipolar programming of selected memory cells, the steering element of the selected memory cells allows current to flow in either direction through the steering element to permit bipolar programming. In some aspects, the steering element has a switch in parallel with the diode. The switches may be opened when sensing selected memory cells to pass sense currents and block sneak currents with the diodes. The switches may be closed during bipolar programming of the selected memory cells to allow bi-directional current flow.


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