The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 09, 2021
Filed:
May. 22, 2019
City University of Hong Kong, Kowloon, HK;
Yong Yang, Kowloon, HK;
Tianyu Wang, Kowloon, HK;
Zhaoyi Ding, Kowloon, HK;
Quanfeng He, Kowloon, HK;
City University of Hong Kong, Kowloon, HK;
Abstract
A new technique, referred to as PSBEE, is disclosed and enables fabrication of freestanding nanomembranes. The PSBEE technique enables fabrication and synthesis of nanomembranes comprising 2D high entropy alloys and 2D metallic glasses and may be extended to ceramics and semiconductors, thereby enabling the fabrication of large-scale freestanding nanomembranes across a wide range of materials, including those deemed to have a great potential for future functional and structural use. To form nanomembranes using PSBEE, a plurality of membranes may be prepared and subjected to thermoplastic compression. Afterwards, one of the membranes may be removed and the remaining membranes may undergo additional thermoplastic compression in the presence of a Si substrate. Once a threshold level of smoothness is achieved, a coating or film may be applied and then separated from the final plate.