The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 2021
Filed:
Dec. 20, 2019
Samsung Electronics Co., Ltd., Suwon-si, KR;
Kihyung Nam, Suwon-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A method of manufacturing a memory device is provided. The method includes the steps of forming a plurality of lower conductive lines on a substrate, forming a plurality of memory units on the plurality of lower conductive lines, forming a switch stack that defines a plurality of first lines, the plurality of first lines extending in parallel in a first direction on the plurality of memory units, forming an upper conductive layer on the switch stack, forming an etch mask that defines a plurality of second lines, the plurality of second lines extending in parallel in a second direction on the upper conductive layer, the second direction being different from the first direction, and forming a plurality of upper conductive lines and a plurality of switch units by etching the upper conductive layer and the switch stack using the etch mask.