The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 2021
Filed:
Mar. 13, 2019
Fujifilm Corporation, Tokyo, JP;
Takamichi Fujii, Kanagawa, JP;
Takayuki Naono, Kanagawa, JP;
FUJIFILM Corporation, Tokyo, JP;
Abstract
Provided are a piezoelectric element having high stability, which operates with high efficiency, and a method for manufacturing the piezoelectric element. The piezoelectric element () has a laminate structure in which a first electrode (), a first piezoelectric film (), a second electrode (), an adhesion layer (), an interlayer (), a third electrode (), a second piezoelectric film (), and a fourth electrode () are laminated in this order on a silicon substrate (). The interlayer () is formed of a material different from that of the second electrode () and has a thickness of 0.4 μm to 10 μm. A device having a diaphragm structure or a cantilever structure is formed by removing a part of the silicon substrate (). The respective layers (to) laminated on the silicon substrate () can be formed using a thin film formation method represented by a vapor phase epitaxial method.