The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 2021
Filed:
Mar. 05, 2020
Facebook Technologies, Llc, Menlo Park, CA (US);
Daniel Bryce Thompson, Cork, IE;
FACEBOOK TECHNOLOGIES, LLC, Menlo Park, CA (US);
Abstract
Disclosed herein is an apparatus including a first three-dimensional (3-D) structure and a second 3-D structure. The first 3-D structure may include a first-type doped semiconductor material having semi-polar facets. The second 3-D structure may form a light-emitting diode (LED). The second 3-D structure may include a second-type doped semiconductor material, an active layer, and the first-type doped semiconductor material. The apparatus may also include a conductive layer which at least partially overlays and is in ohmic contact with the semi-polar facets of the first-type doped semiconductor material. The first-type doped semiconductor material of the first 3-D structure and the first-type doped semiconductor material of the second 3-D structure may be etched from a common first-type doped semiconductor epitaxial layer. In some embodiments, the first-type doped semiconductor material may include an N-type doped semiconductor material, and the second-type doped semiconductor material may include a P-type doped semiconductor material.