The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 2021
Filed:
Aug. 28, 2018
Nippon Telegraph and Telephone Corporation, Tokyo, JP;
Masahiro Nada, Tokyo, JP;
Hideaki Matsuzaki, Tokyo, JP;
NIPPON TELEGRAPH AND TELEPHONE CORPORATION, Tokyo, JP;
Abstract
An n-type semiconductor layer (), a multiplication layer (), an electric field control layer (), a light absorption layer (), and a p-type semiconductor layer () are formed on a growth substrate (), and the p-type semiconductor layer () is adhered on a transfer substrate (). After that, the growth substrate () is removed, and the n-type semiconductor layer () is processed to have an area smaller than that of the multiplication layer ().
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile