The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 2021
Filed:
Aug. 21, 2018
Board of Regents, the University of Texas System, Austin, TX (US);
Daniel Wasserman, Austin, TX (US);
Board of Regents, The University of Texas System, Austin, TX (US);
Abstract
A mid-infrared detector that uses a heavily doped material (e.g., indium arsenide) as a backplane to the detector structure to improve detector performance and fabrication cost. The infrared detector includes a substrate and a backplane of heavily doped material consisting of two or more of the following materials: indium, gallium, arsenic and antimony. The backplane resides directly on the substrate. The infrared detector further includes a photodetector (e.g., type-I or type-II strained layer superlattice (SLS) nBn photodetector, type-I or type-II SLS pn junction photodetector, a quantum-dot infrared photodetector, a quantum well infrared photodetector, a homogeneous material pn junction photodetector) residing directly on the backplane. Additionally, the infrared detector may include a metal structure residing directly on the photodetector. In this manner, the absorption of electromagnetic energy in the photodetector is enhanced.