The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 2021
Filed:
Jan. 30, 2017
Robert Bosch Gmbh, Stuttgart, DE;
Thomas Jacke, Tuebingen, DE;
Wolfgang Feiler, Reutlingen, DE;
Robert Bosch GmbH, Stuttgart, DE;
Abstract
A vertical SiC MOSFET having a source terminal, a drain terminal, and a gate region, as well as an epitaxial layer disposed between the source terminal and the drain terminal and having a doping of a first type, is furnished, a horizontally extending intermediate layer, which has regions having a doping of a second type different from the doping of a first type, being embedded into the epitaxial layer. The vertical SiC MOSFET is notable for the fact that at least the regions having doping of a second type are electrically conductively connected to the source terminal. The gate region can be disposed in a gate trench.