The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 2021
Filed:
May. 27, 2020
Applicant:
Imec Vzw, Leuven, BE;
Inventors:
Assignee:
IMEC VZW, Leuven, BE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8234 (2006.01); H01L 27/088 (2006.01); H01L 29/76 (2006.01); H01L 29/423 (2006.01); H01L 29/417 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/08 (2006.01); H01L 21/02 (2006.01); H01L 21/306 (2006.01); H01L 21/8238 (2006.01); H01L 29/51 (2006.01); H01L 21/311 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0673 (2013.01); H01L 21/02532 (2013.01); H01L 21/30604 (2013.01); H01L 21/31111 (2013.01); H01L 21/823807 (2013.01); H01L 21/823814 (2013.01); H01L 21/823821 (2013.01); H01L 21/823828 (2013.01); H01L 29/0847 (2013.01); H01L 29/1037 (2013.01); H01L 29/42392 (2013.01); H01L 29/513 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01);
Abstract
According to an aspect of the present inventive concept there is provided a method for forming a first and a second nanosheet transistor structure, each comprising a source, a drain, and a channel extending between the source and the drain in a first direction, and a gate extending across the channel, wherein the first and second nanosheet transistor structures are spaced apart in a second direction, transverse to the first direction, by an insulating wall extending in the first direction.