The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 2021
Filed:
Apr. 15, 2020
Samsung Electronics Co., Ltd., Suwon-si, KR;
Taewon Ha, Seongnam-si, KR;
Juyoun Kim, Suwon-si, KR;
Sang Min Lee, Seoul, KR;
Moon-Sun Hong, Suwon-si, KR;
Seki Hong, Hwaseong-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A semiconductor device includes a substrate having an active region, and first to third transistors on the active region of the substrate, each of the first to third transistors including a dielectric layer on the substrate, a metal layer on the dielectric layer, a barrier layer between the dielectric layer and the metal layer, and a work function layer between the dielectric layer and the barrier layer, wherein the barrier layer of the third transistor is in contact with the dielectric layer of the third transistor, and wherein a threshold voltage of the second transistor is greater than a threshold voltage of the first transistor and less than a threshold voltage of the third transistor.