The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 2021
Filed:
Jul. 11, 2019
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Yu-Chieh Chou, New Taipei, TW;
Hsin-Chih Lin, Hsinchu, TW;
VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION, Hsinchu, TW;
Abstract
A semiconductor device includes a base and a conductive layer to form a composite substrate. The conductive layer covers a surface of the base. The semiconductor device also includes a dielectric layer covering the conductive layer. The conductive layer is disposed between the dielectric layer and the base. The semiconductor device further includes a GaN-containing composite layer, a gate electrode disposed over the GaN-containing composite layer, a source electrode and a drain electrode disposed on the GaN-containing composite layer. The source electrode and the drain electrode are disposed at two opposite sides of the gate electrode. In addition, a method for manufacturing the semiconductor device with a composite substrate is provided.