The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 02, 2021

Filed:

Jun. 01, 2018
Applicant:

Showa Denko K.k., Tokyo, JP;

Inventor:

Tomoyuki Fukuyo, Tokyo, JP;

Assignee:

SHOWA DENKO K.K., Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/3065 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31116 (2013.01); H01L 21/3065 (2013.01);
Abstract

An etching method capable of controlling the etching rate of a silicon nitride layer and the etching rate of a silicon oxide layer to be approximately equal to each other. A body to be treated including a laminated film () having silicon oxide layers () and silicon nitride layers () laminated on top of each other is treated with an etching gas containing a halocarbon compound containing carbon, bromine, and fluorine. Then, the silicon oxide layer () and the silicon nitride layer () are etched at approximately equal etching rates.


Find Patent Forward Citations

Fukuyo, Tomoyuki. (2021). Etching method (U.S. Patent No. 11164751). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11164751

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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