The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 2021
Filed:
Aug. 19, 2020
Applicant:
SK Hynix Inc., Icheon, KR;
Inventors:
Sang-Hyun Ban, Icheon, KR;
Tae-Hoon Kim, Icheon, KR;
Woo-Tae Lee, Icheon, KR;
Hye-Jung Choi, Icheon, KR;
Assignee:
SK hynix Inc., Icheon, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 29/50 (2006.01); G11C 11/16 (2006.01); G11C 13/00 (2006.01); G06F 12/0802 (2016.01); G11C 29/04 (2006.01); H01L 27/22 (2006.01); H01L 45/00 (2006.01); H01L 43/08 (2006.01); H01L 27/24 (2006.01); H01L 23/528 (2006.01); H01L 43/10 (2006.01); H01F 10/32 (2006.01);
U.S. Cl.
CPC ...
G11C 29/50 (2013.01); G06F 12/0802 (2013.01); G11C 11/161 (2013.01); G11C 11/1653 (2013.01); G11C 11/1673 (2013.01); G11C 13/004 (2013.01); G11C 13/0004 (2013.01); G11C 13/0007 (2013.01); G11C 13/0023 (2013.01); H01L 23/528 (2013.01); H01L 27/222 (2013.01); H01L 27/2463 (2013.01); H01L 43/08 (2013.01); H01L 45/06 (2013.01); G11C 2029/0407 (2013.01); G11C 2029/5004 (2013.01); G11C 2213/31 (2013.01); G11C 2213/32 (2013.01); H01F 10/329 (2013.01); H01F 10/3254 (2013.01); H01L 43/10 (2013.01); H01L 45/144 (2013.01); H01L 45/146 (2013.01); H01L 45/147 (2013.01);
Abstract
A method drives an electronic device including a semiconductor memory in a test mode. The method includes applying a stress pulse simultaneously to a plurality of memory cells to turn on the plurality of memory cells, determining whether the memory cells are turned on or turned off, and applying a second maximum voltage to a selected memory cell of the plurality of memory cells only when the selected memory cell is determined to be in a turned-off state.