The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 2021
Filed:
Feb. 11, 2019
Applicants:
Biswajit Ray, Huntsville, AL (US);
Preeti Kumari, Huntsville, AL (US);
Inventors:
Biswajit Ray, Huntsville, AL (US);
Preeti Kumari, Huntsville, AL (US);
Assignee:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/34 (2006.01); G06F 3/06 (2006.01); G11C 16/16 (2006.01);
U.S. Cl.
CPC ...
G11C 16/3436 (2013.01); G06F 3/0616 (2013.01); G06F 3/0652 (2013.01); G06F 3/0679 (2013.01); G11C 16/16 (2013.01); G11C 16/3495 (2013.01);
Abstract
A method for radiation hardening flash memory performs accelerated aging on the flash memory by program-erase (PE) cycling the flash memory. Such accelerated aging induces trap states in the tunnel oxide layer of the flash memory, which results in improved ionizing radiation tolerance. The number of cycles used to harden a given memory cell is optimally determined in order to limit effects of the radiation hardening on the reliability of the cell.