The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 02, 2021

Filed:

Sep. 09, 2020
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Sang-Wan Nam, Hwaseong-si, KR;

Dong-Hun Kwak, Hwaseong-si, KR;

Chi-Weon Yoon, Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); G11C 16/16 (2006.01); G11C 8/12 (2006.01); H01L 27/11573 (2017.01); H01L 27/11582 (2017.01); G11C 16/14 (2006.01);
U.S. Cl.
CPC ...
G11C 16/16 (2013.01); G11C 16/0483 (2013.01); H01L 27/11573 (2013.01); H01L 27/11582 (2013.01); G11C 16/14 (2013.01);
Abstract

A nonvolatile memory device includes a memory cell region, a peripheral circuit region, a memory block in the memory cell region, and a control circuit in the peripheral circuit region. The memory cell region includes a first metal pad. The peripheral circuit region includes a second metal pad and is vertically connected to the memory cell region by the first metal pad and the second metal pad. The memory block includes a plurality of memory cells disposed in a vertical direction. The control circuit applies an erase voltage to an erase source terminal of the memory block, and applies a first voltage to a first selection line among a plurality of selection lines in the memory block. The first voltage is higher than the erase voltage. The first selection line is disposed closest to the erase source terminal among the plurality of selection lines and is used for selecting the memory block as an erase target block.


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