The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 2021
Filed:
Jun. 24, 2019
Western Digital Technologies, Inc., San Jose, CA (US);
Niles Yang, Mountain View, CA (US);
Sahil Sharma, San Jose, CA (US);
Rohit Sehgal, San Jose, CA (US);
Phil Reusswig, Mountain View, CA (US);
Western Digital Technologies, Inc., San Jose, CA (US);
Abstract
A storage system comprises a controller connected to blocks of non-volatile memory cells. The memory cells can be operated as single level cell ('SLC') memory cells or multi-level cell ('MLC') memory cells. To increase write performance for a subset of memory cells being operated as SLC memory cells, the controller performs a deeper erase process and a weaker program process for the subset of memory cells. The weaker program process results in a programmed threshold voltage distribution that is lower than the “nominal” programmed threshold voltage distribution. Having a lower programmed threshold voltage distribution reduces the magnitude of the programming and sensing voltages needed and, therefore, shortens the time required to generate the programming and sensing voltages, and reduces power consumption.