The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 02, 2021

Filed:

Dec. 07, 2020
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Jong-chul Park, Hwaseong-si, KR;

Youn-yeol Lee, Seoul, KR;

Seul-bee Lee, Hwaseong-si, KR;

Kyung-sub Lim, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); G11C 11/56 (2006.01); H01L 27/11582 (2017.01); G11C 16/26 (2006.01); G11C 16/12 (2006.01); G11C 16/08 (2006.01); G11C 16/10 (2006.01);
U.S. Cl.
CPC ...
G11C 16/0483 (2013.01); G11C 11/5671 (2013.01); G11C 16/08 (2013.01); G11C 16/10 (2013.01); G11C 16/12 (2013.01); G11C 16/26 (2013.01); H01L 27/11582 (2013.01);
Abstract

A nonvolatile memory device includes a first memory stack including first memory cells vertically stacked on each other, a second memory stack including memory cells vertically stacked on each other, and a control logic configured to set a voltage level of a second voltage applied for a second memory operation to one of the second memory cells in the second memory stack based on a first voltage applied to one of the first memory cells in the first memory stack in a first memory operation. The second memory stack is vertically stacked on the first memory stack. Cell characteristics of the one of the first memory cells is determined using the first voltage.


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