The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 02, 2021

Filed:

Nov. 26, 2019
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Jeongho Lee, Suwon-si, KR;

Youngsik Kim, Suwon-si, KR;

Seungyou Baek, Suwom-si, KR;

Youngkwang Yoo, Suwon-si, KR;

Younggeun Lee, Suwon-si, KR;

Yena Lee, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 29/00 (2006.01); G06F 11/10 (2006.01); G06F 11/30 (2006.01); G06F 9/54 (2006.01); G11C 13/00 (2006.01); G06F 12/02 (2006.01); G06F 9/30 (2018.01);
U.S. Cl.
CPC ...
G06F 11/1044 (2013.01); G06F 9/30029 (2013.01); G06F 9/544 (2013.01); G06F 11/3037 (2013.01); G06F 12/0246 (2013.01); G11C 13/0004 (2013.01); G11C 13/004 (2013.01); G11C 13/0069 (2013.01);
Abstract

An operating method of a memory device, which includes a first memory region and a second memory region, includes reading first data from the first memory region and storing the read first data in a data buffer block, performing a first XOR operation on the first data provided from the data buffer block and second data read from the second memory region to generate first result data, writing the first data stored in the data buffer block in the second memory region, performing a second XOR operation on the first data and the first result data to generate the second data, storing the generated second data in the data buffer block, and writing the second data stored in the data buffer block in the first memory region.


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