The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 2021
Filed:
Mar. 01, 2019
Applicant:
Dexerials Corporation, Tokyo, JP;
Inventors:
Kazuhiro Yagihashi, Tokyo, JP;
Shinya Akiyama, Tokyo, JP;
Assignee:
DEXERIALS CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 29/38 (2006.01); C30B 29/40 (2006.01); C30B 19/12 (2006.01); H01L 29/20 (2006.01); H01L 21/02 (2006.01); C30B 19/04 (2006.01); H01S 5/30 (2006.01); H01L 33/32 (2010.01);
U.S. Cl.
CPC ...
C30B 29/406 (2013.01); C30B 19/04 (2013.01); C30B 19/12 (2013.01); C30B 29/38 (2013.01); H01L 21/0254 (2013.01); H01L 21/02625 (2013.01); H01L 29/2003 (2013.01); H01L 33/32 (2013.01); H01S 5/3013 (2013.01);
Abstract
There is provided a semiconductor substrate including: a sapphire substrate; an intermediate layer formed of gallium nitride with random crystal directions and provided on the sapphire substrate; and at least one or more semiconductor layers each of which is formed of a gallium nitride single crystal and that are provided on the intermediate layer.