The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 2021
Filed:
Jul. 09, 2018
Applicant:
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Inventors:
Timotee Journot, Gieres, FR;
Berangere Hyot, Eybens, FR;
Armelle Even, Rennes, FR;
Amelie Dussaigne, Saint Hilaire de la Cote, FR;
Bruno-Jules Daudin, La Tronche, FR;
Assignee:
Primary Examiner:
Int. Cl.
CPC ...
C30B 25/18 (2006.01); C23C 16/30 (2006.01); C30B 25/10 (2006.01); C30B 29/40 (2006.01);
U.S. Cl.
CPC ...
C30B 25/183 (2013.01); C23C 16/303 (2013.01); C30B 25/10 (2013.01); C30B 29/403 (2013.01);
Abstract
The invention relates to a method for manufacturing a layer of interest (3) in a III-N crystalline compound by epitaxy from a layer of graphene (2), characterized in that it comprises, prior to a phase of nucleation of the layer of interest (3), a step of thermal treatment of the layer of graphene (2) in which it is subjected to a first temperature (T) no lower than 1050° C. and to a stream of ammonia.