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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11162187 B1

PDFFull Text
Date of Patent:
Nov. 02, 2021

Filed:

Oct. 31, 2019

Vapor phase growth device, and epi wafer producing method

Applicant:

Sumitomo Electric Industries, Ltd., Osaka, JP;

Inventor:

Takashi Go, Osaka, JP;

Assignee:

SUMITOMO ELECTRIC INDUSTRIES, LTD., Osaka, JP;

Attorney:

Oliff PLC

Primary Examiner:

Brook Kebede

Int. Cl.
CPC ...
H01L 21/20 (2006.01); C30B 25/14 (2006.01); H01L 21/02 (2006.01); C30B 29/40 (2006.01); C23C 16/458 (2006.01); C23C 16/46 (2006.01); C23C 16/455 (2006.01); C30B 25/10 (2006.01); H01L 21/687 (2006.01);
U.S. Cl.
CPC ...
C30B 25/14 (2013.01); C23C 16/455 (2013.01); C23C 16/4583 (2013.01); C23C 16/46 (2013.01); C30B 25/10 (2013.01); C30B 29/40 (2013.01); H01L 21/0262 (2013.01); H01L 21/02392 (2013.01); H01L 21/02546 (2013.01); H01L 21/02549 (2013.01); H01L 21/68785 (2013.01);
Abstract

A vapor phase growth device includes a flow channel defining a space through which a source gas for forming an epi layer flows, a susceptor configured to hold a substrate in a state where the substrate faces the space, and a first member disposed vertically above and opposite to the susceptor, the first member having a thermal expansion coefficient not less than 0.7 times and not more than 1.3 times the thermal expansion coefficient of the substrate. The flow channel includes a holding portion configured to hold the first member.

Find Patent Forward Citations

Go, Takashi. (2021). Vapor phase growth device, and epi wafer producing method (U.S. Patent No. 11162187). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11162187

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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