The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 2021
Filed:
Apr. 16, 2020
Infineon Technologies Ag, Neubiberg, DE;
Johann Strasser, Schierling, DE;
Alfons Dehe, Villingen Schwenningen, DE;
Gerhard Metzger-Brueckl, Geisenfeld, DE;
Juergen Wagner, Nittendorf, DE;
Arnaud Walther, Unterhaching, DE;
INFINEON TECHNOLOGIES AG, Neubiberg, DE;
Abstract
A production method for a double-membrane MEMS component includes: providing a layer arrangement on a carrier substrate, wherein the layer arrangement comprises a first membrane structure, a sacrificial material layer adjoining the first membrane structure, and a counterelectrode structure in the sacrificial material layer and at a distance from the first membrane structure, wherein at least one through opening is formed in the sacrificial material layer as far as the first membrane structure; forming a filling material structure in the at least one through opening by applying a first filling material layer on the wall region of the at least one through opening; applying a second membrane structure on the layer arrangement with the sacrificial material; and removing the sacrificial material from an intermediate region to expose the filling material structure in the intermediate region.