The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 26, 2021

Filed:

Sep. 09, 2020
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventor:

Mikael R. Borjesson, Lakeside, MT (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H02M 3/156 (2006.01); H02M 3/158 (2006.01); H02M 3/335 (2006.01); G05F 1/565 (2006.01); G05F 1/575 (2006.01); C25D 21/12 (2006.01); H03K 17/687 (2006.01); H03F 3/45 (2006.01);
U.S. Cl.
CPC ...
H03K 17/687 (2013.01); C25D 21/12 (2013.01); H03F 3/45475 (2013.01);
Abstract

A method of controlling a headroom voltage of a transistor stage of an electroplating system to maintain a target power dissipation across the transistor stage may include maintaining a headroom voltage in the transistor stage for a load in the electroplating system. The method may also include measuring an instantaneous power dissipation in the transistor stage and generating a difference output representing a difference between the instantaneous power dissipation in the transistor stage and the target power dissipation in the transistor stage. A voltage across the transistor stage and the load may then be adjusted using the difference output such that the headroom voltage in the transistor stage is adjusted to maintain the target power dissipation in the transistor stage.


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