The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 26, 2021

Filed:

Mar. 27, 2017
Applicant:

Mitsubishi Electric Corporation, Tokyo, JP;

Inventor:

Atsushi Yuyama, Tokyo, JP;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H02M 1/08 (2006.01); H02P 5/74 (2006.01); H02M 7/493 (2007.01); H02M 7/5387 (2007.01); H02M 7/5395 (2006.01); H02P 25/22 (2006.01); H02P 27/04 (2016.01); H02P 27/08 (2006.01); B60L 15/20 (2006.01); B60K 6/40 (2007.10); H02M 1/00 (2006.01);
U.S. Cl.
CPC ...
H02M 7/53871 (2013.01); H02M 1/08 (2013.01); H02M 7/493 (2013.01); H02M 7/5395 (2013.01); H02P 5/74 (2013.01); H02P 25/22 (2013.01); H02P 27/04 (2013.01); H02P 27/085 (2013.01); B60K 6/40 (2013.01); B60L 15/20 (2013.01); B60L 2210/10 (2013.01); B60Y 2200/91 (2013.01); B60Y 2200/92 (2013.01); B60Y 2400/61 (2013.01); H02M 1/0009 (2021.05); H02M 1/0054 (2021.05);
Abstract

To obtain a power conversion device capable of reducing a loss of the power conversion device to improve fuel efficiency and electricity efficiency of an electrically driven vehicle. Provided is a power conversion device (), which is to be mounted to a vehicle (VCL) configured to travel by using a drive motor (M) as a motive power source. The power conversion device () includes inverters () each configured to control the drive motor (M) by having a plurality of switching elements (Qto Q, Qto Q) subjected to switching control. In the power conversion device (), each of the plurality of switching elements (Qto Q, Qto Q) is formed of a wide band gap semiconductor.


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