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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11158767 B1

PDFFull Text
Date of Patent:
Oct. 26, 2021

Filed:

Mar. 24, 2016

Light-emitting element, light-emitting unit, light-emitting panel device, and method for driving light-emitting panel device

Applicant:

Sony Semiconductor Solutions Corporation, Kanagawa, JP;

Inventors:

Goshi Biwa, Kanagawa, JP;

Akira Ohmae, Kanagawa, JP;

Yusuke Kataoka, Kanagawa, JP;

Tatsuo Ohashi, Kanagawa, JP;

Ippei Nishinaka, Kanagawa, JP;

Assignee:

SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa, JP;

Attorney:

Chip Law Group

Primary Examiner:

Mary A Wilczewski

Int. Cl.
CPC ...
H01L 27/15 (2006.01); H01L 33/36 (2010.01); H01L 33/38 (2010.01); H01L 33/46 (2010.01); H01L 33/48 (2010.01); H01L 33/62 (2010.01); H05B 37/02 (2006.01); H05B 47/16 (2020.01); H01L 33/00 (2010.01); H01L 33/44 (2010.01); G09G 3/32 (2016.01);
U.S. Cl.
CPC ...
H01L 33/486 (2013.01); H01L 27/153 (2013.01); H01L 33/0008 (2013.01); H01L 33/38 (2013.01); H01L 33/46 (2013.01); H01L 33/62 (2013.01); H05B 47/16 (2020.01); G09G 3/32 (2013.01); G09G 2300/0426 (2013.01); G09G 2310/08 (2013.01); H01L 33/44 (2013.01);
Abstract

[Object] A light-emitting element includes: a semiconductor layer; a first electrode portion; a second electrode portion; a first insulating layer; and a metal layer. The semiconductor layer includes an active layer, a first-conductivity-type layer, and a second-conductivity-type layer, and has a semiconductor-layer side surface including a side surface of the active layer, a side surface of the first-conductivity-type layer, and a side surface of the second-conductivity-type layer. The first electrode portion is connected to the first-conductivity-type layer. The second electrode portion is connected to the second-conductivity-type layer. The first insulating layer is in contact at least with a part of the semiconductor-layer side surface, the part of the semiconductor-layer side surface corresponding to a part of the side surface of the active layer. The metal layer is in contact at least with an opposed surface of the first insulating layer, the opposed surface of the first insulating layer facing the side surface of the active layer. The metal layer is conducted to the first electrode portion and insulated from the second electrode portion.

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