The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 26, 2021
Filed:
Oct. 22, 2019
Gachon University of Industry-academic Cooperation Foundation, Seongnam-si, KR;
Abstract
A 1T DRAM cell device having two or more heterojunction surfaces perpendicular to the channel length direction and a quantum well at the drain region side. The 1T DRAM cell device described herein may be driven by GIDL or band-to-band tunneling, so that low voltage and high speed operation can be performed, and retention time and read current margin can be dramatically increased. It can also be driven as a memory device in harsh environments with high temperatures. Furthermore, since the heterojunction surfaces can be formed by vertically stacking epitaxial layers on a semiconductor substrate such as silicon, the conventional CMOS process technology can be used, and the area occupied by the device can be reduced as much as possible without limiting the channel length.