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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11158611 B1

PDFFull Text
Date of Patent:
Oct. 26, 2021

Filed:

Jun. 08, 2018

Led filament

Applicant:

Osram Oled Gmbh, Regensburg, DE;

Inventors:

Ee Lian Lee, Balik Pulau, MY;

Tilman Eckert, Regensburg, DE;

Ralph Bertram, Herzogenrath, DE;

Kok Eng Ng, Penang, MY;

Anuarul Ikhwan Mat Nazri, Penang, MY;

Assignee:

OSRAM OLED GMBH, Regensburg, DE;

Attorney:

Slater Matsil, LLP

Primary Examiner:

Vu A Vu

Int. Cl.
CPC ...
H01L 25/075 (2006.01); H01L 21/66 (2006.01); H01L 33/50 (2010.01); H01L 33/62 (2010.01);
U.S. Cl.
CPC ...
H01L 25/0753 (2013.01); H01L 22/12 (2013.01); H01L 33/504 (2013.01); H01L 33/508 (2013.01); H01L 33/62 (2013.01); H01L 2933/0041 (2013.01); H01L 2933/0066 (2013.01);
Abstract

An LED filament is disclosed. In an embodiment an LED filament includes a carrier composed of a material transparent to electromagnetic radiation, two electrical terminals located on the carrier and at least two radiation-emitting semiconductor chips arranged on the carrier, wherein the semiconductor chips are electrically connected to the electrical terminals, wherein undersides of the semiconductor chips are connected by way of an adhesive layer to the carrier, wherein the adhesive layers comprise a first conversion material, wherein the first conversion material is configured to shift at least a portion of a wavelength of radiation from the semiconductor chips, wherein the semiconductor chips comprise a conversion layer on upper sides and on lateral areas, wherein the conversion layers are configured to shift at least a portion of the wavelength of the radiation from the semiconductor chips, wherein a transparent matrix material mixed with a second conversion material covers the semiconductor chips, and wherein sedimented conversion layers with an increased concentration of the second conversion material cover the upper sides and lateral areas of the semiconductor chips.

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