The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 26, 2021
Filed:
Feb. 02, 2017
Mitsubishi Electric Corporation, Chiyoda-ku, JP;
MITSUBISHI ELECTRIC CORPORATION, Tokyo, JP;
Abstract
A semiconductor device that includes a semiconductor layer disposed on a semiconductor substrate, a first semiconductor region provided in an upper layer portion of the semiconductor layer, a second semiconductor region provided in an upper layer portion of the first semiconductor region, a gate insulation film, a gate electrode, a first main electrode that is provided on an interlayer insulation film that covers the gate electrode and that is electrically connected to the second semiconductor region via a contact hole, and a second main electrode disposed on a second main surface of the semiconductor substrate. The first main electrode includes an underlying electrode film connected to the second semiconductor region via the contact hole, and a copper film provided on the underlying electrode film. The copper film includes at least a portion that serves as a stress relaxation layer having a smaller grain size than the other portion of the copper film.