The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 26, 2021
Filed:
Sep. 18, 2020
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventor:
Ji-sang Lee, Iksan-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/14 (2006.01); G11C 11/56 (2006.01); G11C 16/08 (2006.01); G11C 16/10 (2006.01); G11C 16/24 (2006.01); G11C 16/26 (2006.01); G11C 16/34 (2006.01); G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
G11C 16/14 (2013.01); G11C 11/5628 (2013.01); G11C 16/08 (2013.01); G11C 16/10 (2013.01); G11C 16/24 (2013.01); G11C 16/26 (2013.01); G11C 16/3445 (2013.01); G11C 16/3459 (2013.01); G11C 16/3468 (2013.01); G11C 16/3472 (2013.01); G11C 16/3481 (2013.01); G11C 16/0483 (2013.01);
Abstract
An operating method of a non-volatile memory device including a plurality of memory cells respectively connected to a plurality of word lines is provided. The operating method includes applying an erase detect voltage to a selected word line of the plurality of word lines to perform an erase detect operation on memory cells connected to the selected word line in response to a program command, applying a program voltage to the selected word line after the erase detect operation, and counting a number of undererased cells of the memory cells on which the erase detect operation has been performed.