The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 26, 2021

Filed:

Oct. 15, 2020
Applicant:

Digwise Technology Corporation, Ltd, Hsinchu County, TW;

Inventors:

Shih-Hao Chen, Hsinchu County, TW;

Wen-Pin Hsieh, Hsinchu County, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 8/08 (2006.01); G11C 11/412 (2006.01); G11C 11/418 (2006.01); G11C 5/14 (2006.01);
U.S. Cl.
CPC ...
G11C 8/08 (2013.01); G11C 5/147 (2013.01); G11C 11/412 (2013.01); G11C 11/418 (2013.01);
Abstract

A memory device including a voltage boosting circuit, a switching circuit and a word line driving circuit is provided. The voltage boosting circuit is activated in a sleep mode. The voltage boosting circuit, based on an activation signal, performs a voltage boosting operation on a power voltage of a power voltage rail to generate a boosting voltage and transmit the boosting voltage to a control voltage rail. The switching circuit is turned on or cut-off according to a first mode selection signal. The word line driving circuit generates a plurality of word line signals according to the boosting voltage in the sleep mode; in addition, the word line driving circuit generates the word line signals according to the power voltage in a normal mode.


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