The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 26, 2021
Filed:
Jun. 28, 2017
Tsinghua University, Beijing, CN;
Sichuan Energy Internet Research Institute, Tsinghua University, Sichuan, CN;
Jun Hu, Beijing, CN;
Yong Ouyang, Sichuan, CN;
Jinliang He, Beijing, CN;
Shanxiang Wang, Beijing, CN;
Gen Zhao, Beijing, CN;
Zhongxu Wang, Beijing, CN;
Rong Zeng, Beijing, CN;
Chijie Zhuang, Beijing, CN;
Bo Zhang, Beijing, CN;
Zhanqing Yu, Beijing, CN;
TSINGHUA UNIVERSITY, Beijing, CN;
SICHUAN ENERGY INTERNET RESEARCH INSTITUTE, TSINGHUA UNIVERSITY, Sichuan, CN;
Abstract
An optimized extremely-large magnetic field measuring method includes: placing four orthogonally configured tunneling magnetoresistive resistors into an externally applied magnetic field, acquiring the resistances of the tunneling magnetoresistive resistors; calculating the angle between a magnetization direction of a free layer of each tunneling magnetoresistive resistor and that of a reference layer on the basis of the resistances of the four resistors; calculating magnetic field intensity Hand direction θof the externally applied magnetic field calculating magnetic field intensity Hand direction θof the externally applied magnetic field; and determining final magnetic field intensity Hof the externally applied magnetic field on the basis of magnetic field intensity Hand of magnetic field intensity H; determining final direction θ of the externally applied magnetic field on the basis of direction θand of direction θ; and optimizing on the basis of direction θ and of magnetic field intensity H.