The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 26, 2021

Filed:

Mar. 05, 2018
Applicant:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Inventors:

Akihiro Goryu, Kawasaki Kanagawa, JP;

Mitsuaki Kato, Kawasaki Kanagawa, JP;

Akira Kano, Kawasaki Kanagawa, JP;

Kenji Hirohata, Koto Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R 31/26 (2020.01); H01L 21/66 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
G01R 31/2607 (2013.01); G01R 31/2648 (2013.01); H01L 22/14 (2013.01); H01L 29/1608 (2013.01);
Abstract

A semiconductor device inspection apparatus according to embodiments comprises: an action unit that generates an internal stress in a predetermined direction in a semiconductor device; a stress controller that controls a magnitude of the internal stress generated in the semiconductor device by the action unit; a probe electrically connected to the semiconductor device; a probe controller that supplies a current to the semiconductor device via the probe; and a controller that screens the semiconductor device based on a first current flowing through the semiconductor device via the probe while the internal stress is not generated in the semiconductor device and a second current flowing through the semiconductor device via the probe while the action unit generates the internal stress in the semiconductor device.


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