The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 2021
Filed:
Aug. 23, 2018
Applicant:
Nuctech Company Limited, Beijing, CN;
Inventors:
Yaohong Liu, Beijing, CN;
Ziran Zhao, Beijing, CN;
Jinsheng Liu, Beijing, CN;
Wei Jia, Beijing, CN;
Wei Li, Beijing, CN;
Xinshui Yan, Beijing, CN;
Assignee:
Nuctech Company Limited, Beijing, CN;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03K 17/0812 (2006.01); H03K 3/57 (2006.01); H03K 17/081 (2006.01); H03K 17/567 (2006.01); H03K 17/06 (2006.01);
U.S. Cl.
CPC ...
H03K 17/08128 (2013.01); H03K 3/57 (2013.01); H03K 17/06 (2013.01); H03K 17/08116 (2013.01); H03K 17/08126 (2013.01); H03K 17/567 (2013.01); H03K 2017/066 (2013.01); H03K 2217/0081 (2013.01);
Abstract
The disclosed technology relates to a gate protection circuit for an Insulated Gate Bipolar Transistor (IGBT), the IGBT being used as a switch device in a solid state pulse modulator based on the MARX generator principle, the gate protection circuit including: a voltage regulator configured to supply a stable voltage to an emitter of the IGBT with respect to the ground for a gate of the IGBT.