The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 19, 2021

Filed:

May. 13, 2019
Applicant:

Trumpf Photonics, Inc., Cranbury, NJ (US);

Inventors:

Thilo Vethake, Cranbury, NJ (US);

Stefan Heinemann, Hightstown, NJ (US);

Suhit Ranjan Das, West Windsor, NJ (US);

Assignee:

Trumpf Photonics, Inc., Cranbury, NJ (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/40 (2006.01); G02B 19/00 (2006.01); H01S 5/32 (2006.01); H01S 5/042 (2006.01);
U.S. Cl.
CPC ...
H01S 5/4025 (2013.01); G02B 19/0057 (2013.01); H01S 5/04256 (2019.08); H01S 5/04257 (2019.08); H01S 5/3211 (2013.01); H01S 5/4018 (2013.01); H01S 5/4031 (2013.01);
Abstract

A laser diode bar: includes a semiconductor substrate comprising a first semiconductor layer of a first conductivity type; a first laser diode stack on an upper side of the semiconductor layer; a second laser diode stack on the upper side of the semiconductor layer, the second laser diode stack being electrically connected in series with the first laser diode stack, in which an electrical conductivity of the first semiconductor layer of the first conductivity type is higher than an electrical conductivity of each semiconductor layer of the first and second laser diode stacks; and a first electrode layer on the first laser diode stack, in which the first electrode layer electrically connects the first laser diode stack to a portion of the first semiconductor layer of the first conductivity type that is between the first laser diode stack and the second laser diode stack.


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