The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 2021
Filed:
Jul. 05, 2018
Applicant:
Furukawa Electric Co., Ltd., Tokyo, JP;
Inventors:
Eisaku Kaji, Tokyo, JP;
Yutaka Ohki, Tokyo, JP;
Assignee:
FURUKAWA ELECTRIC CO., LTD., Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/10 (2006.01); H01S 5/22 (2006.01); H01S 5/042 (2006.01); H01S 5/023 (2021.01); H01S 5/0233 (2021.01); H01S 5/0235 (2021.01); G02B 6/293 (2006.01); G02B 6/32 (2006.01); G02B 6/34 (2006.01); G02B 6/42 (2006.01);
U.S. Cl.
CPC ...
H01S 5/1014 (2013.01); G02B 6/2938 (2013.01); G02B 6/29362 (2013.01); G02B 6/32 (2013.01); G02B 6/34 (2013.01); G02B 6/4206 (2013.01); G02B 6/4215 (2013.01); H01S 5/023 (2021.01); H01S 5/0233 (2021.01); H01S 5/0235 (2021.01); H01S 5/0421 (2013.01); H01S 5/04254 (2019.08); H01S 5/1039 (2013.01); H01S 5/22 (2013.01); H01S 5/04256 (2019.08);
Abstract
A semiconductor laser device of an edge emission type, where a waveguide mode is multi-mode, is provided. The semiconductor laser device includes a first facet of the waveguide on an emission direction front side, the first facet having a first width in a horizontal direction perpendicular to a longitudinal direction of the waveguide; and a second facet of the waveguide on an emission direction rear side, the second facet having the first width, wherein a width of the waveguide, in the horizontal direction, is at least partially narrower than the first width, between the first facet and the second facet.