The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 19, 2021

Filed:

Dec. 06, 2017
Applicant:

Ip2ipo Innovations Limited, London, GB;

Inventors:

Jan Zemen, Celakovice, CZ;

Andrei Paul Mihai, London, GB;

Bin Zou, London, GB;

David Boldrin, London, GB;

Evgeniy Donchev, London, GB;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); H01L 43/10 (2006.01); G11C 11/16 (2006.01); G11C 11/22 (2006.01); H01L 27/20 (2006.01); H01L 27/22 (2006.01); H01L 43/02 (2006.01);
U.S. Cl.
CPC ...
H01L 43/10 (2013.01); G11C 11/161 (2013.01); G11C 11/1673 (2013.01); G11C 11/1675 (2013.01); G11C 11/22 (2013.01); H01L 27/20 (2013.01); H01L 27/222 (2013.01); H01L 43/02 (2013.01);
Abstract

A non-volatile memory cell comprising: a storage layer comprised of a ferromagnetic or ferroelectric material in which data is recordable as a direction of magnetic or electric polarisation; a piezomagnetic layer comprised of an antiperovskite piezomagnetic material selectively having a first type of effect on the storage layer and a second type of effect on the storage layer dependent upon the magnetic state and strain in the piezomagnetic layer; and a strain inducing layer for inducing a strain in the piezomagnetic layer thereby to switch from the first type of effect to the second type of effect.


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