The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 2021
Filed:
May. 05, 2020
Samsung Electronics Co., Ltd., Suwon-si, KR;
Bae-Seong Kwon, Incheon, KR;
Yongjae Kim, Seongnam-si, KR;
Kyungtae Nam, Suwon-si, KR;
Kuhoon Chung, Seoul, KR;
Abstract
A magnetic memory device includes a lower contact plug on a substrate, a magnetic tunnel junction pattern on the lower contact plug, a bottom electrode, which is between the lower contact plug and the magnetic tunnel junction pattern and is in contact with a bottom surface of the magnetic tunnel junction pattern, and a top electrode on a top surface of the magnetic tunnel junction pattern. Each of the bottom electrode, the magnetic tunnel junction pattern, and the top electrode has a thickness in a first direction, which is perpendicular to a top surface of the substrate. A first thickness of the bottom electrode is about 0.6 to 1.1 times a second thickness of the magnetic tunnel junction pattern.